IRFL9110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 100V 1.1A SOT223
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | P-Channel | 1.1 A | 2 W 3.1 W | -55 °C | 150 °C | SOT-223 | MOSFET (Metal Oxide) | 10 V | 20 V | 1.2 Ohm | 4 V | 200 pF | 8.7 nC | Surface Mount | 100 V | TO-261-4 TO-261AA |
Vishay General Semiconductor - Diodes Division | P-Channel | 1.1 A | 2 W 3.1 W | -55 °C | 150 °C | SOT-223 | MOSFET (Metal Oxide) | 10 V | 20 V | 1.2 Ohm | 4 V | 200 pF | 8.7 nC | Surface Mount | 100 V | TO-261-4 TO-261AA |