TSM4NB65 Series

Catalog

MOSFET N-CHANNEL 650V 4A TO251

Part	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Supplier Device Package	Package / Case
Taiwan Semiconductor Corporation TSM4NB65CH C5G	4.5 V	N-Channel	70 W	13.46 nC	Through Hole	3.37 Ohm	10 V	MOSFET (Metal Oxide)	30 V	4 A	650 V	150 °C	-55 °C	549 pF	IPAK	TO-251	IPAK TO-251-3 Short Leads TO-251AA