SI7784 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 35A PPAK SO-8
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 45 nC | PowerPAK® SO-8 | 1600 pF | 20 V | 6 mOhm | PowerPAK® SO-8 | -55 °C | 150 °C | Surface Mount | N-Channel | 4.5 V 10 V | 35 A | 30 V | 2.5 V | MOSFET (Metal Oxide) | 5 W 27.7 W |