IRFIBC40 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 3.5A TO220-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 4 V | Through Hole | TO-220-3 | 40 W | 60 nC | 1.2 Ohm | 1300 pF | 600 V | N-Channel | MOSFET (Metal Oxide) | 10 V | 20 V | TO-220-3 Full Pack Isolated Tab | 3.5 A |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 4 V | Through Hole | TO-220-3 | 40 W | 39 nC | 1.2 Ohm | 1100 pF | 600 V | N-Channel | MOSFET (Metal Oxide) | 10 V | 20 V | TO-220-3 Full Pack Isolated Tab | 3.5 A |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 4 V | Through Hole | TO-220-3 | 40 W | 60 nC | 1.2 Ohm | 1300 pF | 600 V | N-Channel | MOSFET (Metal Oxide) | 10 V | 20 V | TO-220-3 Full Pack Isolated Tab | 3.5 A |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 4 V | Through Hole | TO-220-3 | 40 W | 39 nC | 1.2 Ohm | 1100 pF | 600 V | N-Channel | MOSFET (Metal Oxide) | 10 V | 20 V | TO-220-3 Full Pack Isolated Tab | 3.5 A |