LM7481-Q1 Series

Automotive ideal diode controller with active rectification driving B2B NFETs

Catalog

Automotive ideal diode controller with active rectification driving B2B NFETs

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Delay Time - ON	Type	Grade	Supplier Device Package	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Ratio - Input:Output [custom]	Applications	Internal Switch(s)	Current - Supply	Delay Time - OFF	Qualification	FET Type
Texas Instruments LM74810QDRRRQ1	Surface Mount Wettable Flank	-40 °C	125 ¯C	850 ns	N+1 ORing Controller	Automotive	12-WSON (3x3)	12-WFDFN Exposed Pad	65 V	3 V	1:1	Redundant Power Supplies		408 µA	500 ns	AEC-Q100	N-Channel

Catalog

Automotive ideal diode controller with active rectification driving B2B NFETs

Key Features

• AEC-Q100 qualified for automotive applicationsDevice temperature grade 1: –40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 2Device CDM ESD classification level C4B3-V to 65-V input rangeReverse input protection down to –65 VDrives external back to back N-channel MOSFETsIdeal diode operation with 9.1-mV A to C forward voltage drop regulationLow reverse detection threshold (–4 mV) with fast response (0.5 µs)Active rectification up to 200-KHz60-mA peak gate (DGATE) turn-on current2.6-A peak DGATE turnoff currentIntegrated 3.8-mA charge pumpAdjustable over voltage protectionLow 2.87 µA shutdown current (EN/UVLO=Low)2.6-A peak DGATE turn-off currentMeets automotive ISO7637 transient requirements with a suitable TVS diodeAvailable in space saving 12-Pin WSON packageAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: –40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 2Device CDM ESD classification level C4B3-V to 65-V input rangeReverse input protection down to –65 VDrives external back to back N-channel MOSFETsIdeal diode operation with 9.1-mV A to C forward voltage drop regulationLow reverse detection threshold (–4 mV) with fast response (0.5 µs)Active rectification up to 200-KHz60-mA peak gate (DGATE) turn-on current2.6-A peak DGATE turnoff currentIntegrated 3.8-mA charge pumpAdjustable over voltage protectionLow 2.87 µA shutdown current (EN/UVLO=Low)2.6-A peak DGATE turn-off currentMeets automotive ISO7637 transient requirements with a suitable TVS diodeAvailable in space saving 12-Pin WSON package

Description

The LM74810-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and over voltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong charge pump of 3.8 mA with 60-mA peak GATE source current driver stage and short turn ON and turn OFF delay times ensures fast transient response ensuring robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124 where an ECU is subjected to input short interruptions and AC superimpose input signals upto 200-KHz frequency. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and over voltage protection using HGATE control. The device features an adjustable over voltage cut-off protection feature for load dump protection. The LM74810-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and over voltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong charge pump of 3.8 mA with 60-mA peak GATE source current driver stage and short turn ON and turn OFF delay times ensures fast transient response ensuring robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124 where an ECU is subjected to input short interruptions and AC superimpose input signals upto 200-KHz frequency. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and over voltage protection using HGATE control. The device features an adjustable over voltage cut-off protection feature for load dump protection.