SI7459 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 30V 13A PPAK SO-8
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.9 W | 6.8 mOhm | 30 V | -55 °C | 150 °C | 13 A | 25 V | MOSFET (Metal Oxide) | 10 V | Surface Mount | 170 nC | PowerPAK® SO-8 | 3 V | PowerPAK® SO-8 | P-Channel |
Vishay General Semiconductor - Diodes Division | 1.9 W | 6.8 mOhm | 30 V | -55 °C | 150 °C | 13 A | 25 V | MOSFET (Metal Oxide) | 10 V | Surface Mount | 170 nC | PowerPAK® SO-8 | 3 V | PowerPAK® SO-8 | P-Channel |