FQPF10N50CF Series

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 10 A, 610 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 10 A, 610 mΩ, TO-220F

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Supplier Device Package	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FQPF10N50CF	4 V	10 A	2096 pF	N-Channel	TO-220-3 Full Pack	TO-220F-3	Through Hole	30 V	48 W	MOSFET (Metal Oxide)	56 nC	500 V	10 V	610 mOhm	-55 °C	150 °C

Catalog

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 10 A, 610 mΩ, TO-220F

Key Features

• 10A, 500V, RDS(on)= 610mΩ(Max.) @VGS= 10 V, ID= 5A

• Low gate charge ( Typ. 43nC)

• Low Crss( Typ. 16pF)

• 100% avalanche tested

• Fast recovery body diode

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.