TPS53317A Series

0.9V-6V Input, 6-A Output, D-CAP+ Mode, SWIFT Synchronous Step-Down Converter for DDR VTT

Catalog

0.9V-6V Input, 6-A Output, D-CAP+ Mode, SWIFT Synchronous Step-Down Converter for DDR VTT

Part	Package / Case	Supplier Device Package	Voltage - Input [Min]	Voltage - Input [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Applications	Voltage - Output [Min]	Voltage - Output [Max]	Number of Outputs	Mounting Type	Outputs and Type	Outputs and Type	Voltage - Output	Supplied Contents	Utilized IC / Part	Current - Output	Contents	Board Type	Regulator Topology	Main Purpose
Texas Instruments TPS53317RGBR	20-VFQFN Exposed Pad	20-VQFN (3.5x4)	1 V	6 V	85 °C	-40 °C	Converter DDR	0.6 V	2 V	1	Surface Mount
Texas Instruments TPS53317AEVM-726			1.1 V	1.3 V								1 Non-Isolated Output Non-Isolated	1	0.6 V	Board(s)	TPS53317	6 A	Board(s)	Fully Populated	Buck	DC/DC Step Down
Texas Instruments TPS53317ARGBR	20-VFQFN Exposed Pad	20-VQFN (3.5x4)	4.5 V	6.5 V	85 °C	-40 °C	Converter DDR	0.45 V	2 V	1	Surface Mount
Texas Instruments TPS53317ARGBT	20-VFQFN Exposed Pad	20-VQFN (3.5x4)	4.5 V	6.5 V	85 °C	-40 °C	Converter DDR	0.45 V	2 V	1	Surface Mount

Catalog

0.9V-6V Input, 6-A Output, D-CAP+ Mode, SWIFT Synchronous Step-Down Converter for DDR VTT

Key Features

• TI-Proprietary Integrated MOSFET and Packaging TechnologySupports DDR Memory Termination with up to 6-A Continuous Output Source or Sink CurrentExternal TrackingMinimum External Components Countto 6-V Conversion VoltageD-CAP+ Mode ArchitectureSupports All MLCC Output Capacitors and SP/POSCAPSelectable SKIP Mode or Forced CCMOptimized Efficiency at Light and Heavy LoadsSelectable 600-kHz or 1-MHz Switching FrequencySelectable Overcurrent Limit (OCL)Overvoltage, Over-Temperature and Hiccup Undervoltage ProtectionAdjustable Output Voltage from to 2 V3.5 mm × 4 mm, 20-Pin, VQFN PackageTI-Proprietary Integrated MOSFET and Packaging TechnologySupports DDR Memory Termination with up to 6-A Continuous Output Source or Sink CurrentExternal TrackingMinimum External Components Countto 6-V Conversion VoltageD-CAP+ Mode ArchitectureSupports All MLCC Output Capacitors and SP/POSCAPSelectable SKIP Mode or Forced CCMOptimized Efficiency at Light and Heavy LoadsSelectable 600-kHz or 1-MHz Switching FrequencySelectable Overcurrent Limit (OCL)Overvoltage, Over-Temperature and Hiccup Undervoltage ProtectionAdjustable Output Voltage from to 2 V3.5 mm × 4 mm, 20-Pin, VQFN Package

Description

The device is a FET-integrated synchronous buck regulator designed mainly for DDR termination. It can provide a regulated output at ½ VDDQwith bothsink and source capability. The device employs D-CAP+ mode operation that provides ease of use, low external component count and fast transient response. The device canalso be used for other point-of-load (POL) regulation applications requiring up to 6 A. Inaddition, the device supports full, 6-A, output sinking current capability with tight voltageregulation. The device features two switching frequency settings (600 kHz and 1 MHz), integrateddroop support, external tracking capability, pre-bias startup, output soft discharge, integratedbootstrap switch, power good function, V5IN pin UVLO protection, and supports both ceramic andSP/POSCAP capacitors. It supports input voltages up to 6.0 V, and output voltages adjustable from to 2.0 V. The device is available in the 3.5 mm × 4 mm, 20-pin, VQFNpackage (Green RoHs compliant and Pb free) with TI proprietary Integrated MOSFET and packaging technology and is specified from –40°C to 85°C. The device is a FET-integrated synchronous buck regulator designed mainly for DDR termination. It can provide a regulated output at ½ VDDQwith bothsink and source capability. The device employs D-CAP+ mode operation that provides ease of use, low external component count and fast transient response. The device canalso be used for other point-of-load (POL) regulation applications requiring up to 6 A. Inaddition, the device supports full, 6-A, output sinking current capability with tight voltageregulation. The device features two switching frequency settings (600 kHz and 1 MHz), integrateddroop support, external tracking capability, pre-bias startup, output soft discharge, integratedbootstrap switch, power good function, V5IN pin UVLO protection, and supports both ceramic andSP/POSCAP capacitors. It supports input voltages up to 6.0 V, and output voltages adjustable from to 2.0 V. The device is available in the 3.5 mm × 4 mm, 20-pin, VQFNpackage (Green RoHs compliant and Pb free) with TI proprietary Integrated MOSFET and packaging technology and is specified from –40°C to 85°C.