FDB150N10 Series

N-Channel PowerTrench® MOSFET 100V, 57A, 15mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 57A, 15mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Technology
ON Semiconductor FDB150N10	4760 pF	110 W	-55 °C	150 °C	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	4.5 V	15 mOhm	10 V	57 A	Surface Mount	69 nC	TO-263 (D2PAK)	20 V	MOSFET (Metal Oxide)

Catalog

N-Channel PowerTrench® MOSFET 100V, 57A, 15mΩ

Key Features

• RDS(on)= 12mΩ ( Typ.) @ VGS= 10V, ID= 49A

• Fast switching speed

• Low Gate Charge

• High performance trench technology for extremely low RDS(on)

• High power and current handling capability

• RoHS compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.