SI7100 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 8V 35A PPAK 1212-8
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.8 W 52 W | 8 V | 1 V | PowerPAK® 1212-8 | N-Channel | Surface Mount | 3.5 mOhm | 2.5 V 4.5 V | PowerPAK® 1212-8 | 105 nC | MOSFET (Metal Oxide) | 35 A | 150 °C | -50 °C | 8 V | 3810 pF |
Vishay General Semiconductor - Diodes Division | 3.8 W 52 W | 8 V | 1 V | PowerPAK® 1212-8 | N-Channel | Surface Mount | 3.5 mOhm | 2.5 V 4.5 V | PowerPAK® 1212-8 | 105 nC | MOSFET (Metal Oxide) | 35 A | 150 °C | -50 °C | 8 V | 3810 pF |