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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs (Max) | Supplier Device Package | Technology | Package / Case | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 13.3 mOhm | 30 V | 150 °C | -55 °C | 4.5 V 10 V | 40 W | 1.7 W | 1650 pF | Surface Mount | 20 V | MLPAK33 | MOSFET (Metal Oxide) | 8-PowerVDFN | P-Channel | 2.5 V | 8.6 A 42.5 A | 50.1 nC |