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40 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Grade | Supplier Device Package | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Automotive | DFN2020MD-6 | 4 V | 10 V | 15 W | 6-UDFN Exposed Pad | 8 A | 460 pF | 20 V | 40 V | 25 mOhm | 175 °C | -55 °C | AEC-Q101 | 13 nC | N-Channel | Surface Mount | MOSFET (Metal Oxide) |