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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Qualification | Technology | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 2 W 15 W | 4.5 V 10 V | Surface Mount | 6-UDFN Exposed Pad | N-Channel | 210 mOhm | 2.7 V | 20 V | DFN2020MD-6 | AEC-Q101 | MOSFET (Metal Oxide) | 110 pF | 2.1 A | 5.7 A | 175 °C | -55 °C | 60 V | 3.8 nC | Automotive |