IMW65R020 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 83 A, 650 V, 0.018 OHM, TO-247
| Part | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | SiC (Silicon Carbide Junction Transistor) | PG-TO247-3-40 | 18 mOhm | -7 V 23 V | 83 A | Through Hole | 5.6 V | TO-247-3 | N-Channel | 2038 pF | 650 V | 57 nC | 175 °C | -55 °C | 15 V 20 V | 273 W |