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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Grade | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Qualification | FET Type | Supplier Device Package | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 16 nC | 2.3 W 15 W | MOSFET (Metal Oxide) | 8.4 A 23 A | 175 °C | -55 °C | 553 pF | 20 V | 4.5 V 10 V | Automotive | 16.8 mOhm | 2.5 V | 30 V | 6-UDFN Exposed Pad | AEC-Q101 | N-Channel | DFN2020MD-6 | Surface Mount |