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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Qualification | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Vgs (Max) | Technology | Package / Case | Grade | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.3 V | TO-236AB | Surface Mount | AEC-Q101 | 175 °C | -55 °C | 20 V | 12 V | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | Automotive | 2.5 V 8 V | 1025 pF | 8.3 W | 610 mW | 5 A | P-Channel | 33 mOhm | 16 nC |