Catalog
60 V, 320 mA dual N-channel Trench MOSFET
Description
AI
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
60 V, 320 mA dual N-channel Trench MOSFET
60 V, 320 mA dual N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | FET Feature | Package / Case | Mounting Type | Grade | Supplier Device Package | Drain to Source Voltage (Vdss) | Power - Max [Max] | Configuration | Technology | Vgs(th) (Max) @ Id | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 320 mA | 56 pF | 1.6 Ohm | 150 °C | -55 °C | Logic Level Gate | 6-TSSOP SC-88 SOT-363 | Surface Mount | Automotive | 6-TSSOP | 60 V | 445 mW | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 1.6 V | AEC-Q101 | 0.7 nC |