IPW50R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 550V 17A TO247-3

Part	Supplier Device Package	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPW50R199CPFKSA1	PG-TO247-3-1	Through Hole	150 °C	-55 °C	17 A	550 V	MOSFET (Metal Oxide)	3.5 V	TO-247-3	1800 pF	N-Channel	199 mOhm	45 nC	139 W	20 V	10 V
INFINEON IPW50R190CEFKSA1	PG-TO247-3-1	Through Hole	150 °C	-55 °C	18.5 A	500 V	MOSFET (Metal Oxide)		TO-247-3		N-Channel		47.2 nC		20 V	13 V	127 W	3.5 V	1137 pF	190 mOhm
INFINEON IPW50R280CEFKSA1	PG-TO247-3-1	Through Hole	150 °C	-55 °C	13 A	500 V	MOSFET (Metal Oxide)		TO-247-3		N-Channel			92 W	20 V	13 V		3.5 V	773 pF	280 mOhm	32.6 nC
INFINEON IPW50R299CPFKSA1	PG-TO247-3-1	Through Hole	150 °C	-55 °C	12 A	550 V	MOSFET (Metal Oxide)		TO-247-3	1190 pF	N-Channel		31 nC	104 W	20 V	10 V		3.5 V		299 mOhm
INFINEON IPW50R399CPFKSA1	PG-TO247-3-1	Through Hole	150 °C	-55 °C	9 A	560 V	MOSFET (Metal Oxide)		TO-247-3		N-Channel		23 nC	83 W	20 V	10 V		3.5 V	890 pF	399 mOhm
INFINEON IPW50R350CPFKSA1	PG-TO247-3-1	Through Hole	150 °C	-55 °C	10 A	550 V	MOSFET (Metal Oxide)		TO-247-3	1020 pF	N-Channel	350 mOhm	25 nC		20 V	10 V		3.5 V