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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Power Dissipation (Max) | Grade | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 175 °C | -55 °C | 1.25 V | TO-236AB | 5 nC | MOSFET (Metal Oxide) | 30 V | SC-59 SOT-23-3 TO-236-3 | 3.4 A | 57 mOhm | 12 V | 2.5 V 8 V | 590 mW | 5.6 W | Automotive | Surface Mount | N-Channel | 296 pF | AEC-Q101 |