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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Grade | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Qualification | Package / Case | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | Automotive | 660 pF | 2.1 V | N-Channel | 4.5 V 10 V | Surface Mount Wettable Flank | 60 V | 29 mOhm | AEC-Q101 | 8-PowerVDFN | MLPAK33 | 175 °C | -55 °C | 18 nC | MOSFET (Metal Oxide) | 21 A | 27 W |