BSZ0910 Series
Manufacturer: INFINEON
Beta
⌘K
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 4.5 MOHM;
| Part | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Configuration | FET Feature | FET Feature | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | MOSFET (Metal Oxide) | 2.1 W 37 W | 17 nC | 1100 pF | 30 V | 4.5 mOhm | 2 V | 40 A | 18 A | 8-PowerTDFN | 150 °C | -55 °C | 4.5 V 10 V | N-Channel | Surface Mount | 20 V | PG-TDSON-8 FL | ||||||
 INFINEON | MOSFET (Metal Oxide) | 5.6 nC | 800 pF | 30 V | 2 V | 8-PowerVDFN | 150 °C | -55 °C | Surface Mount | PG-WISON-8 | 9.5 mOhm | 9.5 A 25 A | 2 N-Channel (Dual) | 4.5 V | Logic Level Gate | 1.9 W 31 W |