High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.18 A/-0.1 A, 4.0 Ω@2.5V/11 Ω@2.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.18 A/-0.1 A, 4.0 Ω@2.5V/11 Ω@2.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.18 A/-0.1 A, 4.0 Ω@2.5V/11 Ω@2.5V, SOT-563(ES6)
| Part | Supplier Device Package | Configuration | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | ES6 | N and P-Channel | 3 Ohm | MOSFET (Metal Oxide) | 9.5 pF | 150 °C | SOT-563 SOT-666 | Surface Mount | 1 V | 20 V | 100 mA 180 mA | Logic Level Gate |