SI4348 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 8A 8SO
| Part | FET Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 12.5 mOhm | 30 V | 23 nC | 12 V | 1.31 W | 2 V | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | Surface Mount | 4.5 V 10 V | -55 °C | 150 °C | 8 A |