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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 8.7 nC | 150 °C | -55 °C | 8 V | 30 V | 66 mOhm | SC-59 SOT-23-3 TO-236-3 | 1.5 V 4.5 V | TO-236AB | N-Channel | 352 pF | 1.9 A | Surface Mount | 900 mV | 2.1 W 340 mW | MOSFET (Metal Oxide) |