6A100 Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 6A R-6
| Part | Grade | Qualification | Supplier Device Package | Current - Average Rectified (Io) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Technology | Capacitance @ Vr, F | Mounting Type | Package / Case | Speed [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Automotive | AEC-Q101 | R-6 | 6 A | -55 °C | 150 °C | 10 çA | Standard | 60 pF | Through Hole | R-6 Axial | 200 mA 500 ns | 1000 V | 1 V |
Taiwan Semiconductor Corporation | R-6 | 6 A | -55 °C | 150 °C | 10 çA | Standard | 60 pF | Through Hole | R-6 Axial | 200 mA 500 ns | 1000 V | 1 V | ||
Taiwan Semiconductor Corporation | R-6 | 6 A | -55 °C | 150 °C | 10 çA | Standard | 60 pF | Through Hole | R-6 Axial | 200 mA 500 ns | 1000 V | 1 V | ||
Taiwan Semiconductor Corporation | R-6 | 6 A | -55 °C | 150 °C | 10 çA | Standard | 60 pF | Through Hole | R-6 Axial | 200 mA 500 ns | 1000 V | 1 V |