SIHG33 Series

Catalog

MOSFET N-CH 650V 31.6A TO247AC

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIHG33N65EF-GE3	171 nC	-55 °C	150 °C	31.6 A	4026 pF	30 V	10 V	MOSFET (Metal Oxide)	TO-247-3	TO-247AC	313 W	650 V	N-Channel	109 mOhm	Through Hole	4 V
Vishay General Semiconductor - Diodes Division SIHG33N60E-E3	150 nC	-55 °C	150 °C	33 A	3508 pF	30 V	10 V	MOSFET (Metal Oxide)	TO-247-3	TO-247AC		600 V	N-Channel		Through Hole	4 V	278 W	99 mOhm
Vishay General Semiconductor - Diodes Division SIHG33N60EF-GE3	155 nC	-55 °C	150 °C	33 A	3454 pF	30 V	10 V	MOSFET (Metal Oxide)	TO-247-3	TO-247AC		600 V	N-Channel		Through Hole	4 V	278 W	98 mOhm