Catalog
200V 10A, TO-252, Ultra low IRSBD
Description
AI
RB088BM200FNS is a ultra low IRschottky barrier diode, suitable for Switching power supply.
Beta
⌘K
200V 10A, TO-252, Ultra low IRSBD
200V 10A, TO-252, Ultra low IRSBD
| Part | Current - Reverse Leakage @ Vr | Diode Configuration | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Package / Case | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If | Technology | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 7 µA | 1 Pair Common Cathode | TO-252 | 200 V | Surface Mount | 200 mA 500 ns | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 °C | 880 mV | Schottky | 5 A |