Catalog
200V 10A, TO-252, Ultra low IRSBD
Key Features
• High reliability, Power mold type, Cathode common dual type, Super Low IR
Description
AI
RB088BM200FNS is a ultra low IRschottky barrier diode, suitable for Switching power supply.
Beta
⌘K
200V 10A, TO-252, Ultra low IRSBD
200V 10A, TO-252, Ultra low IRSBD
| Part | Supplier Device Package | Technology | Current - Reverse Leakage @ Vr | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction | Diode Configuration | Mounting Type | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | TO-252 | Schottky | 7 µA | 200 mA 500 ns | 200 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5 A | 175 °C | 1 Pair Common Cathode | Surface Mount | 880 mV |