LMG3626 Series

650V 270mΩ GaN FET with integrated driver, protection and current sensing

Catalog

650V 270mΩ GaN FET with integrated driver, protection and current sensing

Part	Mounting Type	Current - Output (Max) [Max]	Ratio - Input:Output [custom]	Output Type	Switch Type	Output Configuration	Fault Protection	Voltage - Supply (Vcc/Vdd) [Min]	Voltage - Supply (Vcc/Vdd) [Max]	Features	Rds On (Typ)	Operating Temperature [Max]	Operating Temperature [Min]	Interface	Package / Case	Number of Outputs
Texas Instruments LMG3626REQR	Surface Mount	3.25 A	1:1	N-Channel	General Purpose	Low Side	UVLO	10 V	26 V	Slew Rate Controlled	270 mOhm	125 °C	-40 °C	Logic	38-VFQFN Exposed Pad	1

Catalog

650V 270mΩ GaN FET with integrated driver, protection and current sensing

Key Features

• 650-V 270-mΩ GaN power FETIntegrated gate driver with low propagation delays and adjustable turn-on slew-rate controlCurrent-sense emulation with high bandwidth and high accuracyCycle-by-cycle overcurrent protectionOvertemperature protection with FLT pin reportingAUX quiescent current: 240 µAAUX standby quiescent current: 50 µAMaximum supply and input logic pin voltage: 26 V8 mm × 5.3 mm QFN package with thermal pad650-V 270-mΩ GaN power FETIntegrated gate driver with low propagation delays and adjustable turn-on slew-rate controlCurrent-sense emulation with high bandwidth and high accuracyCycle-by-cycle overcurrent protectionOvertemperature protection with FLT pin reportingAUX quiescent current: 240 µAAUX standby quiescent current: 50 µAMaximum supply and input logic pin voltage: 26 V8 mm × 5.3 mm QFN package with thermal pad

Description

The LMG3626 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3626 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package. Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground. The LMG3626 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin. The LMG3626 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3626 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package. Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground. The LMG3626 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin.