Catalog
650V, 4A, THD, Silicon-carbide (SiC) SBD
Description
AI
Shorter recovery time, enabling high-speed switching.
Beta
⌘K
650V, 4A, THD, Silicon-carbide (SiC) SBD
650V, 4A, THD, Silicon-carbide (SiC) SBD
| Part | Technology | Operating Temperature - Junction | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Supplier Device Package | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Package / Case | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 175 °C | 500 mA | 650 V | 20 µA | 4 A | TO-220FM | 0 ns | 1.5 V | Through Hole | TO-220-2 Full Pack | 200 pF |