FFSH15120ADN-F155 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-3L

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-3L

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Diode Configuration	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io) (per Diode)	Supplier Device Package
ON Semiconductor FFSH15120ADN-F155	1.75 V	TO-247-3	1 Pair Common Cathode	Through Hole	200 mA 500 ns	200 µA	175 ░C	-55 C	1.2 kV	SiC (Silicon Carbide) Schottky	8 A	TO-247-3
ON Semiconductor FFSH15120ADN-F155	1.75 V	TO-247-3	1 Pair Common Cathode	Through Hole	200 mA 500 ns	200 µA	175 ░C	-55 C	1.2 kV	SiC (Silicon Carbide) Schottky	8 A	TO-247-3

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-3L

Key Features

• Max Junction Temperature 175 °C

• Avalanche Rated 80 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• No Reverse Recovery / No Forward Recovery

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.