FDMS7620S Series

Dual N-Channel PowerTrench® MOSFET 30V

Catalog

Dual N-Channel PowerTrench® MOSFET 30V

Part	Drain to Source Voltage (Vdss)	FET Feature	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Vgs(th) (Max) @ Id	Power - Max [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Mounting Type
ON Semiconductor FDMS7620S	30 V	Logic Level Gate	10.1 A	12.4 A	608 pF	20 mOhm	11 nC	2 N-Channel (Dual)	3 V	1 W	8-PowerWDFN	-55 °C	150 °C	Power56	MOSFET (Metal Oxide)	Surface Mount

Catalog

Dual N-Channel PowerTrench® MOSFET 30V

Key Features

• Q1: N-ChannelMax rDS(on)= 20.0 mΩ at VGS= 10 V, ID= 10.1 AMax rDS(on)= 30.0 mΩ at VGS= 4.5 V, ID= 7.5 A

• Q2: N-ChannelMax rDS(on)= 11.2 mΩ at VGS= 10 V, ID= 12.4 AMax rDS(on)= 14.2 mΩ at VGS= 4.5 V, ID= 10.9 A

• Pinout optimized for simple PCB design

• Thermally efficient dual Power 56 Package

• RoHS Compliant

Description

This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization. The low switching loss "High Side" MOSFET is complementory by a low conduction loss "Low Side" SyncFET.