FDB2710 Series

N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDB2710	-55 °C	150 °C	250 V	260 W	101 nC	30 V	MOSFET (Metal Oxide)	TO-263 (D2PAK)	42.5 mOhm	10 V	N-Channel	7280 pF	Surface Mount	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 A

Catalog

N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

Key Features

• RDS(on)= 36.3mΩ (Typ.) @ VGS= 10V, ID= 25A

• High performance trench technology for extermly low RDS(on)

• Low Gate Charge

• High power and current handing capability

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.