IRFD014 Series

Catalog

MOSFET N-CH 60V 1.7A 4DIP

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type
Vishay General Semiconductor - Diodes Division IRFD014	11 nC	20 V	10 V	60 V	4-DIP (0.300" 7.62mm)	4 V	-55 °C	175 ░C	1.7 A	200 mOhm	Through Hole	MOSFET (Metal Oxide)	1.3 W	310 pF	N-Channel
Vishay General Semiconductor - Diodes Division IRFD014PBF	11 nC	20 V	10 V	60 V	4-DIP (0.300" 7.62mm)	4 V	-55 °C	175 ░C	1.7 A	200 mOhm	Through Hole	MOSFET (Metal Oxide)	1.3 W	310 pF	N-Channel