SUM90 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 90A TO263
| Part | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs (Max) | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 257 nC | 3.75 W 250 W | 2.2 mOhm | 2.5 V | 12065 pF | 4.5 V 10 V | TO-263 (D2PAK) | MOSFET (Metal Oxide) | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | Surface Mount | N-Channel | 30 V | 90 A | |
Vishay General Semiconductor - Diodes Division | 3.75 W 300 W | 4.4 mOhm | 4.5 V | 6190 pF | 10 V | TO-263 (D2PAK) | MOSFET (Metal Oxide) | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | Surface Mount | N-Channel | 60 V | 90 A | 160 nC |