AFGB40T65RQDN Series

IGBT - 650 V 40 A - Short circuit rated FS4 - Automotive qualified

Catalog

IGBT - 650 V 40 A - Short circuit rated FS4 - Automotive qualified

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Test Condition	Gate Charge	Mounting Type	Vce(on) (Max) @ Vge, Ic	IGBT Type	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Reverse Recovery Time (trr)	Supplier Device Package	Td (on/off) @ 25°C
ON Semiconductor AFGB40T65RQDN	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	68 A	339.37 W	3 Ohm 15 V 20 A 400 V	51 nC	Surface Mount	1.82 V	Field Stop	420 µJ 470 µJ	-55 °C	175 ░C	650 V	52 ns	TO-263 (D2PAK)	21 ns 77 ns

Catalog

IGBT - 650 V 40 A - Short circuit rated FS4 - Automotive qualified

Key Features

• AEC Q101 qualified

• Maximum Junction Temperature : TJ = 175℃

• Positive Temperature Co-efficient

• Low Saturation Voltage

• Tightened Parameter Distribution

• High Current Capability

• Short Circuit rated

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.