PDTC124 Series
Manufacturer: NXP USA Inc.
TRANS PREBIAS NPN 50V 0.1A SMT3
| Part | DC Current Gain (hFE) (Min) | Package Name | Package / Case | Voltage - Collector Emitter Breakdown (Max) | Transistor Type | Power - Max | Resistor - Base (R1) Resistance | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Resistor - Emitter Base (R2) | Mounting Type | Vce Saturation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP USA Inc. | 80 | SMT3; MPAK | SC-59 SOT-23-3 TO-236-3 | 50 V | NPN Pre-Biased | 250 mW | 22 kOhm | 0.1 mA | 1 µA | 47 kOhm | Surface Mount | 150 mV |
NXP USA Inc. | 100 | SC-75 | SC-75 SOT-416 | 50 V | NPN Pre-Biased | 150 mW | 22 kOhm | 0.1 mA | 1 µA | Surface Mount | 150 mV | |
NXP USA Inc. | 60 | SMT3; MPAK | SC-59 SOT-23-3 TO-236-3 | 50 V | NPN Pre-Biased | 250 mW | 22 kOhm | 0.1 mA | 1 µA | 22 kOhms | Surface Mount | 150 mV |
NXP USA Inc. | 60 | SC-75 | SC-75 SOT-416 | 50 V | NPN Pre-Biased | 150 mW | 22 kOhm | 0.1 mA | 1 µA | 22 kOhms | Surface Mount | 150 mV |
NXP USA Inc. | 60 | TO-92-3 | TO-226-3 TO-92-3 (TO-226AA) Formed Leads | 50 V | NPN Pre-Biased | 0.5 W | 22 kOhm | 0.1 mA | 1 µA | 22 kOhms | Through Hole | 150 mV |
NXP USA Inc. | 80 | TO-92-3 | TO-226-3 TO-92-3 (TO-226AA) Formed Leads | 50 V | NPN Pre-Biased | 0.5 W | 22 kOhm | 0.1 mA | 1 µA | 47 kOhm | Through Hole | 150 mV |