SIS862 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 60V 15.8A/52A PPAK
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 60 V | 1235 pF | PowerPAK® 1212-8 | 4.5 V 10 V | 30 nC | 3.6 W 39 W | -55 °C | 150 °C | 7.2 mOhm | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 15.8 A 52 A | 2.5 V | 20 V | PowerPAK® 1212-8 |
Vishay General Semiconductor - Diodes Division | 60 V | 1320 pF | PowerPAK® 1212-8 | 4.5 V 10 V | 32 nC | 3.7 W 52 W | -55 °C | 150 °C | 8.5 mOhm | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 2.6 V | 20 V | PowerPAK® 1212-8 |