High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -40 V, -80 A, 0.0052 Ω@10V, DPAK+
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -40 V, -80 A, 0.0052 Ω@10V, DPAK+
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -40 V, -80 A, 0.0052 Ω@10V, DPAK+
| Part | Grade | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) [Max] | Vgs (Max) [Min] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature | Package / Case | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Automotive | Surface Mount | 6 V 10 V | 10 V | -20 V | 3 V | 80 A | 5.2 mOhm | P-Channel | 175 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 40 V | DPAK+ | MOSFET (Metal Oxide) | 100 W | 7770 pF | 158 nC | AEC-Q101 |
Toshiba Semiconductor and Storage | Automotive | Surface Mount | 6 V 10 V | 10 V | -20 V | 3 V | 80 A | 5.2 mOhm | P-Channel | 175 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 40 V | DPAK+ | MOSFET (Metal Oxide) | 100 W | 7770 pF | 158 nC | AEC-Q101 |