2SA949 Series

Catalog

TRANS PNP 150V 0.05A TO92MOD

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Operating Temperature
Toshiba Semiconductor and Storage 2SA949-O(TE6,F,M)	800 mV	100 nA	800 mW	TO-92MOD	70 hFE	150 V	PNP	TO-226-3 TO-92-3 Long Body	Through Hole	50 mA	120 MHz	150 °C
Toshiba Semiconductor and Storage 2SA949-Y(JVC1,F,M)	800 mV	100 nA	800 mW	TO-92MOD	70 hFE	150 V	PNP	TO-226-3 TO-92-3 Long Body	Through Hole	50 mA	120 MHz	150 °C
Toshiba Semiconductor and Storage 2SA949-Y(T6SHRP,FM	800 mV	100 nA	800 mW	TO-92MOD	70 hFE	150 V	PNP	TO-226-3 TO-92-3 Long Body	Through Hole	50 mA	120 MHz	150 °C
Toshiba Semiconductor and Storage 2SA949-Y,F(J	800 mV	100 nA	800 mW	TO-92MOD	70 hFE	150 V	PNP	TO-226-3 TO-92-3 Long Body	Through Hole	50 mA	120 MHz	150 °C
Toshiba Semiconductor and Storage 2SA949-Y(TE6,F,M)	800 mV	100 nA	800 mW	TO-92MOD	70 hFE	150 V	PNP	TO-226-3 TO-92-3 Long Body	Through Hole	50 mA	120 MHz	150 °C
Toshiba Semiconductor and Storage 2SA949-Y(T6ONK1,FM	800 mV	100 nA	800 mW	TO-92MOD	70 hFE	150 V	PNP	TO-226-3 TO-92-3 Long Body	Through Hole	50 mA	120 MHz	150 °C
Toshiba Semiconductor and Storage 2SA949-Y(T6JVC1,FM	800 mV	100 nA	800 mW	TO-92MOD	70 hFE	150 V	PNP	TO-226-3 TO-92-3 Long Body	Through Hole	50 mA	120 MHz	150 °C