FDB14AN06L_F085 Series

N-Channel PowerTrench® MOSFET, 60V, 60A, 14.6mΩ,

Catalog

N-Channel PowerTrench® MOSFET, 60V, 60A, 14.6mΩ,

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Qualification	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
ON Semiconductor FDB14AN06LA0-F085	2900 pF	MOSFET (Metal Oxide)	TO-263 (D2PAK)	3 V	10 V	5 V	N-Channel	AEC-Q101	11.6 mOhm	67 A	Surface Mount	20 V	125 W	Automotive	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	31 nC	60 V

Catalog

N-Channel PowerTrench® MOSFET, 60V, 60A, 14.6mΩ,

Key Features

• rDS(ON)= 12.8mΩ(Typ.), VGS= 5V, ID= 60A

• Qg(tot) = 24nC (Typ.), VGS= 5V

• Low Miller Charge

• Low QRRBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS Compliant

Description

N-Channel PowerTrench®MOSFET, 60V, 60A, 14.6mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.