LM5113 Series

1.2-A/5-A, 90-V half bridge gate driver for GaNFET

Catalog

1.2-A/5-A, 90-V half bridge gate driver for GaNFET

Part	Logic Voltage - VIL, VIH	Gate Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Package / Case	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Input [Max]	Voltage - Input [Min]	Frequency - Switching	Board Type	Outputs and Type	Outputs and Type	Current - Output	Regulator Topology	Voltage - Output	Supplied Contents	Main Purpose	Utilized IC / Part
Texas Instruments LM5113SD/NOPB	1.76 V 1.89 V	N-Channel MOSFET	4.5 V	5.5 V	Surface Mount	Independent	-40 °C	125 ¯C	107 V	Non-Inverting	2	1.5 ns	7 ns	Half-Bridge	10-WDFN Exposed Pad	10-WSON (4x4)	1.2 A	5 A
Texas Instruments LM5113LLPEVB/NOPB																			60 V	15 V	800 kHz	Fully Populated	Non-Isolated	1	10 A	Buck	10 V	Board(s)	DC/DC Step Down	LM5113
Texas Instruments LM5113SDE/NOPB	1.76 V 1.89 V	N-Channel MOSFET	4.5 V	5.5 V	Surface Mount	Independent	-40 °C	125 ¯C	107 V	Non-Inverting	2	1.5 ns	7 ns	Half-Bridge	10-WDFN Exposed Pad	10-WSON (4x4)	1.2 A	5 A
Texas Instruments LM5113SDX/NOPB	1.76 V 1.89 V	N-Channel MOSFET	4.5 V	5.5 V	Surface Mount	Independent	-40 °C	125 ¯C	107 V	Non-Inverting	2	1.5 ns	7 ns	Half-Bridge	10-WDFN Exposed Pad	10-WSON (4x4)	1.2 A	5 A
Texas Instruments LM5113TME/NOPB	1.76 V 1.89 V	N-Channel MOSFET	4.5 V	5.5 V	Surface Mount	Independent	-40 °C	125 ¯C	107 V	Non-Inverting	2	1.5 ns	7 ns	Half-Bridge	12-WFBGA DSBGA	12-DSBGA	1.2 A	5 A

Catalog

1.2-A/5-A, 90-V half bridge gate driver for GaNFET

Key Features

• Independent high-side and low-sideTTL logic inputs1.2 A / 5 A peak source/sink currentHigh-side floating bias voltage railOperates up to 100 VDCInternal bootstrap supply voltage clampingSplit outputs for adjustableturnon/turnoff strength0.6-Ω / 2.1-Ω pulldown/pullup resistanceFast propagation times (28 ns typical)Excellent propagation delay matching(1.5 ns typical)Supply rail undervoltage lockoutLow power consumptionIndependent high-side and low-sideTTL logic inputs1.2 A / 5 A peak source/sink currentHigh-side floating bias voltage railOperates up to 100 VDCInternal bootstrap supply voltage clampingSplit outputs for adjustableturnon/turnoff strength0.6-Ω / 2.1-Ω pulldown/pullup resistanceFast propagation times (28 ns typical)Excellent propagation delay matching(1.5 ns typical)Supply rail undervoltage lockoutLow power consumption

Description

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution. In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance. The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution. In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.