SI4808 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 5.7A 8SOIC
| Part | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Configuration | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | FET Feature | Power - Max [Max] | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 30 V | 8-SOIC | 2 N-Channel (Dual) | 8-SOIC | 3.9 mm | 0.154 in | 250 µA 800 mV | Logic Level Gate | 1.1 W | 22 mOhm | -55 °C | 150 °C | 5.7 A | 20 nC | MOSFET (Metal Oxide) |