FFP30S60S Series

30A, 600V, STEALTH™ II Diode

Catalog

30A, 600V, STEALTH™ II Diode

Part	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)
ON Semiconductor FFP30S60STU	TO-220-2	Standard	150 °C	-65 C	200 mA 500 ns	Through Hole	600 V	30 A	TO-220-2L	100 µA	2.6 V	40 ns

Catalog

30A, 600V, STEALTH™ II Diode

Key Features

• Stealth recovery Trr= 40ns (@IF= 30A)

• Max Forward Voltage, VF= 2.6V (@ TC= 25°C)

• 600V Reverse Voltage and High Reliability

• Avalanche Energy Rated

• RoHS compliant

Description

The FFP30S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.