Catalog
650V, 6A, THD, Silicon-carbide (SiC) SBD
Description
AI
Shorter recovery time, enabling high-speed switching.
Beta
⌘K
650V, 6A, THD, Silicon-carbide (SiC) SBD
650V, 6A, THD, Silicon-carbide (SiC) SBD
| Part | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Supplier Device Package | Capacitance @ Vr, F | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Speed | Package / Case | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 1.5 V | Through Hole | TO-220FM | 300 pF | SiC (Silicon Carbide) Schottky | 650 V | 6 A | 30 µA | 175 °C | 500 mA | TO-220-2 Full Pack | 0 ns |