IRFPE50 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 800V 7.8A TO247-3
| Part | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3100 pF | MOSFET (Metal Oxide) | 4 V | 10 V | 7.8 A | 800 V | 200 nC | 190 W | TO-247AC | TO-247-3 | 1.2 Ohm | N-Channel | 20 V | -55 °C | 150 °C | Through Hole |