IRF1503 Series
Manufacturer: INFINEON
MOSFET N-CH 30V 75A D2PAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Technology | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 10 V | 4 V | 75 A | 3.3 mOhm | 20 V | D2PAK | 5730 pF | 200 nC | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 200 W | MOSFET (Metal Oxide) | Surface Mount | 175 °C | -55 °C | N-Channel |
INFINEON | 10 V | 4 V | 75 A | 3.3 mOhm | 20 V | D2PAK | 5730 pF | 200 nC | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 200 W | MOSFET (Metal Oxide) | Surface Mount | 175 °C | -55 °C | N-Channel |
INFINEON | 10 V | 4 V | 75 A | 3.3 mOhm | 20 V | TO-220AB | 5730 pF | 200 nC | 30 V | TO-220-3 | 330 W | MOSFET (Metal Oxide) | Through Hole | 175 °C | -55 °C | N-Channel |
INFINEON | 10 V | 4 V | 75 A | 3.3 mOhm | 20 V | TO-262 | 5730 pF | 200 nC | 30 V | I2PAK TO-262-3 Long Leads TO-262AA | 200 W | MOSFET (Metal Oxide) | Through Hole | 175 °C | -55 °C | N-Channel |
INFINEON | 10 V | 4 V | 75 A | 3.3 mOhm | 20 V | D2PAK | 5730 pF | 200 nC | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 200 W | MOSFET (Metal Oxide) | Surface Mount | 175 °C | -55 °C | N-Channel |