Catalog
Dual N-Channel Enhancement Mode MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Vgs (Max) | Supplier Device Package | Grade | Qualification | Configuration | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 1.8 V 4.5 V | N-Channel | MOSFET (Metal Oxide) | 1 V | 870 mA | 0.6 nC | -55 °C | 150 °C | SOT-523 | 450 mOhm | 42 pF | Surface Mount | 20 V | 320 mW | 6 V | SOT-523 | ||||
 Diodes Inc | 1.8 V 4.5 V | N-Channel | MOSFET (Metal Oxide) | 1 V | 900 mA | 0.6 nC | -55 °C | 150 °C | SC-70 SOT-323 | 450 mOhm | 42 pF | Surface Mount | 20 V | 470 mW | 6 V | SOT-323 | Automotive | AEC-Q101 | ||
Diodes Inc | 1.8 V 4.5 V | N-Channel | MOSFET (Metal Oxide) | 1 V | 870 mA | 0.6 nC | -55 °C | 150 °C | SOT-523 | 450 mOhm | 42 pF | Surface Mount | 20 V | 320 mW | 6 V | SOT-523 | Automotive | AEC-Q101 | ||
 Diodes Inc | MOSFET (Metal Oxide) | 1 V | 800 mA | 0.6 nC | -55 °C | 150 °C | 6-TSSOP SC-88 SOT-363 | 450 mOhm | 42 pF | Surface Mount | 20 V | SOT-363 | 2 N-Channel (Dual) | 360 mW | ||||||
Diodes Inc | 1 V | 800 mA | 0.6 nC | -55 °C | 150 °C | 6-TSSOP SC-88 SOT-363 | 450 mOhm | 42 pF | Surface Mount | 20 V | SOT-363 | Automotive | AEC-Q101 | 2 N-Channel (Dual) | 360 mW |
Key Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• ESD Protected
• Totally Lead-Free & Fully RoHS Compliant
• Halogen and Antimony Free. "Green" Device
• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/
Description
AI
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.