SSM6P36FE Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH X 2 MOSFET, -20 V, -0.33 A, 1.31 Ω@4.5V, SOT-563(ES6)

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Configuration	Package / Case	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6P36FE,LM	ES6	1 V	2 P-Channel (Dual)	SOT-563 SOT-666	Logic Level Gate	1.2 nC	330 mA	Surface Mount	1.31 Ohm	MOSFET (Metal Oxide)	20 V	150 °C	43 pF