IR2127 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HI/LOW SIDE 8SOIC

Part	Gate Type	Driven Configuration	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Package / Case	Package / Case	Package / Case	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type
INFINEON 98-0066	IGBT MOSFET (N-Channel) N-Channel MOSFET	High-Side or Low-Side	0.8 V 3 V	-40 °C	150 °C	40 ns	80 ns	250 mA	500 mA	1	0.154 in	8-SOIC	3.9 mm	Single	600 V	Non-Inverting	8-SOIC	12 VDC	20 V	Surface Mount
INFINEON IR2127STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	High-Side or Low-Side	0.8 V 3 V	-40 °C	150 °C	40 ns	80 ns	250 mA	500 mA	1	0.154 in	8-SOIC	3.9 mm	Single	600 V	Non-Inverting	8-SOIC	12 VDC	20 V	Surface Mount
INFINEON IR2127	IGBT MOSFET (N-Channel) N-Channel MOSFET	High-Side or Low-Side	0.8 V 3 V	-40 °C	150 °C	40 ns	80 ns	250 mA	500 mA	1		8-DIP (0.300" 7.62mm)		Single	600 V	Non-Inverting	8-PDIP	12 VDC	20 V	Through Hole
INFINEON IR2127PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	High-Side or Low-Side	0.8 V 3 V	-40 °C	150 °C	40 ns	80 ns	250 mA	500 mA	1		8-DIP (0.300" 7.62mm)		Single	600 V	Non-Inverting	8-PDIP	12 VDC	20 V	Through Hole
INFINEON IR2127STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	High-Side or Low-Side	0.8 V 3 V	-40 °C	150 °C	40 ns	80 ns	250 mA	500 mA	1	0.154 in	8-SOIC	3.9 mm	Single	600 V	Non-Inverting	8-SOIC	12 VDC	20 V	Surface Mount
INFINEON IR2127SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	High-Side or Low-Side	0.8 V 3 V	-40 °C	150 °C	40 ns	80 ns	250 mA	500 mA	1	0.154 in	8-SOIC	3.9 mm	Single	600 V	Non-Inverting	8-SOIC	12 VDC	20 V	Surface Mount