SIDR170 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 23.2A/95A PPAK
| Part | Package / Case | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | PowerPAK® SO-8DC | MOSFET (Metal Oxide) | 23.2 A 95 A | -55 °C | 150 °C | 20 V | 6.25 W 125 W | 2.5 V | Surface Mount | 140 nC | 4.8 mOhm | 6195 pF | N-Channel | 4.5 V 10 V | 100 V |